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TPCF8104 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part # TPCF8104
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8104 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TPCF8104
2006-11-16
5
Drain-source voltage VDS (V)
Capacitance – VDS
1
-0.1
10
100
1000
10000
-1
-10
-100
Ciss
Coss
Crss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
Ambient temperature Ta (°C)
RDS (ON) – Ta
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Ambient temperature Ta (°C)
Vth – Ta
0
-1
-2
-4
−80
−40
0
40
80
120
160
-3
Common source
VDS = -10 V
ID = -1 mA
Pulse test
Ambient temperature Ta (°C)
PD – Ta
Drain-source voltage VDS (V)
IDR – VDS
0
-1
0.4
-10
-100
1.2
1.6
VGS = 0 V
-10
-4.5
-1
-2
0.8
2
Common source
Ta
= 25°C
Pulse test
-3
-8
-4
-16
0
0
-10
-30
VDD = -24 V
VDS
VGS
-6
-12
-40
-50
-40
-20
-10
-30
0
-20
Common source
ID = -6 A
Ta
= 25°C
Pulse test
-12
0
0
40
80
120
160
0.5
1.5
2
2.5
3
1
(1) t
= 5 s
(1) DC
(2) t
= 5 s
(2) DC
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
160
−40
0
40
80
120
−80
50
40
30
20
10
0
ID = -6A
-1.5A
-3A
VGS = -10 V
Common source
Pulse test
VGS = -4.5 V
ID =− 6A
-1.5A
-3A



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