SCS210KN

SiC Schottky Barrier Diode

lOutline

VR

1200V

TO-263-2L

IF

10A

QC

18nC

lFeatures

lInner circuit

1) Low forward voltage

2) Negligible recovery time/current

3) Temperature independent switching behavior

4) Wide creepage distance = min. 5.10mm

lPackaging specifications

lApplications

Type

Packaging

Embossed tape

・ Factory Automation

Reel size (mm)

330

・ PV Power Conditioner

Tape width (mm)

24

・ Wireless Charger

Basic ordering unit (pcs)

1000

Reverse voltage (repetitive peak)

VRM

1200

V

・ EV Charger Station

Packing code

TRL

Marking

SCS210KN

lAbsolute maximum ratings (T

vj = 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Reverse voltage (DC)

VR

1200

V

Continuous forward current

(Tc = 143°C)

IF

10

A

A

Repetitive peak forward current

IFRM

47

A

Surge non-

repetitive forward

current

PW = 10ms sinusoidal, Tvj = 25°C

IFSM

42

A

PW = 10ms sinusoidal, Tvj = 150°C

31

A

PW = 10μs square, T

vj = 25°C

160

PW = 10ms, Tvj = 150°C

4.8

A

2s

Total power dissipation

PD

136

W

i

2t value

PW = 10ms, Tvj = 25°C

∫i2dt

9.0

A

2s

*1 Limited by maximum Tvj and for Max. RthJC.

*2 Tc = 100°C, Tvj = 150°C, Duty cycle = 10% *3 Tc = 25°C

Virtual Junction temperature

Tvj

175

°C

Range of storage temperature

Tstg

-40 to +175

°C

*2

*3

*1

(3)

(1)

(2)

(1) Cathode

(2) Cathode

(3) Anode

(2)

(3)

(1)

1/8

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TSZ22111・14・001

TSQ50244-SCS210KN

27.Sep.2024 - Rev.001

Datasheet

Datasheet