Symbol

Parameter

Conditions

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V(BR)CEO

V(BR)CBO

V(BR)EBO

Min

Collector cut-off current

ICBO

Electrical Characteristics (at TA=25°C unless otherwise noted)

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

VCE(sat)

VBE(sat)

fT

hFE

Base-emitter voltage

VBE(on)

Typ

ABC846T-HF

ABC847T-HF

ABC848T-HF

ABC846T-HF

ABC847T-HF

ABC848T-HF

ABC846T-HF

ABC847T-HF

ABC848T-HF

ABC846AT-HF, 847AT-HF, 848AT-HF

ABC846BT-HF, 847BT-HF, 848BT-HF

ABC847CT-HF, 848CT-HF

ABC846AT-HF, 847AT-HF, 848AT-HF

ABC846BT-HF, 847BT-HF, 848BT-HF

ABC847CT-HF, 848CT-HF

Transition frequency

IC = 10µA, IE = 0

IC = 10mA, IB = 0

IE = 10µA, IC = 0

VCB = 30V, IE = 0

VCE = 5V, IC = 10µA

VCE = 5V, IC = 2mA

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

VCE = 5V, IC = 2mA

VCE = 5V, IC = 10mA

VCE = 5V, IC = 10mA

f = 100MHz

80

50

30

V

V

V

nA

V

V

MHz

V

65

45

30

6

6

5

15

110

250

480

110

200

420

220

450

800

0.70

0.90

0.58

0.66

0.70

0.77

100

0.25

0.60

Small Signal Transistor

Comchip Technology CO., LTD.

Page 2

REV:A

Collector-emitter cut-off current

IEBO

VEB = 5V, IC = 0

nA

100

Emitter-base cut-off current

ICEO

VCE = 30V, IB = 0

mA

1

0.09

0.20

0.90

1.10

AQW-JTR78

VCB = 30V, IE = 0, TJ = 150°C

µA

5