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FDS6912. Datasheet(PDF) 4 Page - ON Semiconductor

Part # FDS6912.
Description  Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDS6912. Datasheet(HTML) 4 Page - ON Semiconductor

  FDS6912. Datasheet HTML 1Page - ON Semiconductor FDS6912. Datasheet HTML 2Page - ON Semiconductor FDS6912. Datasheet HTML 3Page - ON Semiconductor FDS6912. Datasheet HTML 4Page - ON Semiconductor FDS6912. Datasheet HTML 5Page - ON Semiconductor FDS6912. Datasheet HTML 6Page - ON Semiconductor FDS6912. Datasheet HTML 7Page - ON Semiconductor  
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FDS6912 Rev E (W)
Typical Characteristics
011
223
3
0
6
12
18
24
30
V
,D RAIN-SOUR CE VOLTAGE (V)
3.0V
4.0V
4.5V
DS
V
= 10V
GS
5.0V
6.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
2030
4050
ID, DRAIN CURRENT (A)
VGS = 4.0V
6.0V
5.0V
4.5V
7.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
T , JUNCTION TEMPERATURE (°C)
V
=10V
GS
I = 6.3A
D
J
I = 3.0A
D
T = 125 C
A
25 C
o
o
GS
2
468
10
1
2
3
4
5
6
7
8
V
,GATE-SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
12
34
5
0
5
10
15
20
V
, GATE TO SOURCE VOLTAGE (V)
25°C
125°C
V
= 5V
DS
GS
T = -55°C
J
0.0001
0.001
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
o
C
25
o
C
-55
o
C
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.



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