FDS6912 Rev E (W)

Typical Characteristics (continued)

0

2

4

6

8

10

04

8

12

16

Qg, GATE CHARGE (nC)

ID = 6.3A

VDS = 5V

10V

15V

0.3

1

3

10

30

V

, DRAIN TO SOURCE VOLTAGE (V)

80

200

2000

DS

Ciss

f = 1 MHz

V

= 0V

GS

Coss

C rss

0.1

500

1000

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.1

0.2

0.5

1

2

5

10

20

0.01

0.05

0.5

2

10

20

100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

1s

100

ms

10s

10m

s

RD

S(O

N) LI

MIT

1m

s

100u

s

DC

V

= 10V

SINGLE PULSE

R

= 135 °C/W

T

= 25°C

GS

A

θJA

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

= 135°C/W

T = 25°

θJA

A

30

25

20

15

10

5

0

0.01

0.1

1

10

100

1000

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1

2

R

(t) = r(t) * R

R

= 135°C/W

θJA

θJA

θJA

T - T

= P * R

(t)

θJA

A

J

P(pk)

t1

t 2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.