LM7332

SNOSAV4B – APRIL 2008 – REVISED JANUARY 2016

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5-V Electrical Characteristics (continued)

Unless otherwise specified, all limits are ensured for TA = 25°C, V

+ = 5 V, V− = 0 V, V

CM = 0.5 V, VO = 2.5 V, and RL > 1 MΩ

to 2.5 V.

(1)

PARAMETER

TEST CONDITIONS

MIN (2)

TYP (3)

MAX (2)

UNIT

GBWP

Gain bandwidth product

f = 50 kHz

19.3

MHz

en

Input-referred voltage noise

f = 2 kHz

14.8

nV/

√HZ

in

Input-referred current noise

f = 2 kHz

1.35

pA/

√HZ

AV = +2, RL = 100 kΩ, f = 1 kHz,

THD+N

Total harmonic distortion + noise

−84

dB

VO = 4 VPP

CT Rej.

Crosstalk rejection

f = 3 MHz, Driver RL = 10 kΩ

68

dB

6.6

±5-V Electrical Characteristics

Unless otherwise specified, all limits are ensured for TA = 25°C, V

+ = +5 V, V− = −5 V, V

CM = 0 V, VO = 0 V, and RL > 1 MΩ to

0 V.

(1)

PARAMETER

TEST CONDITIONS

MIN (2)

TYP (3)

MAX (2)

UNIT

VCM = −4.5 V and VCM = 4.5 V

−4

±1.6

4

VOS

Input offset voltage

mV

At the temperature extremes

−5

5

Input offset voltage temperature

TC VOS

VCM = −4.5 V and VCM = 4.5 V

(4)

±2

µV/°C

drift

See (5)

−2

±1

2

IB

Input bias current

µA

At the temperature extremes

−2.5

2.5

20

250

IOS

Input offset current

nA

At the temperature extremes

300

−5 V ≤ VCM ≤ 3 V

74

88

At the temperature extremes

75

CMRR

Common-mode rejection ratio

dB

−5 V ≤ VCM ≤ 5 V

70

74

At the temperature extremes

65

5 V

≤ V+ ≤ 30 V, VCM = −4.5 V

78

100

PSRR

Power supply rejection ration

dB

At the temperature extremes

74

CMRR > 50 dB

5.1

–5.3

–5.1

Input common-mode voltage

CMVR

V

range

At the temperature extremes

5

5.3

–5.1

−4 V ≤ VO ≤ 4 V

72

80

RL = 10 kΩ to 0 V

AVOL

Large signal voltage gain

dB

At the temperature extremes

70

(1)

Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in

very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical

tables under conditions of internal self-heating where TJ > TA.

(2)

All limits are ensured by testing or statistical analysis.

(3)

Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped

production material.

(4)

Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.

(5)

Positive current corresponds to current flowing in the device.

6

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