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LM5025AMTC/NOPB Datasheet(PDF) 7 Page - Texas Instruments |
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LM5025AMTC/NOPB Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 34 page ![]() 7 LM5025A www.ti.com SNVS293F – DECEMBER 2004 – REVISED AUGUST 2016 Product Folder Links: LM5025A Submit Documentation Feedback Copyright © 2004–2016, Texas Instruments Incorporated Electrical Characteristics (continued) Typical limits are for TJ = 25°C, and minimum and maximum limits apply over the operating junction temperature range (–40°C to 125°C). VIN = 48 V, VCC = 10 V, RT = 31.3 kΩ, RSET = 27.4 kΩ) unless otherwise stated (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SOFT-START Soft-start current source normal TJ = 25°C 22 µA over full operating junction temperature 17 27 Soft-start current source following a CS2 event TJ = 25°C 1 µA over full operating junction temperature 0.5 1.5 OSCILLATOR Frequency1 TA = 25°C, 180 200 220 kHz TJ = Tlow to Thigh 175 225 Frequency2 RT = 10.4 kΩ TA = 25°C, 580 kHz TJ = Tlow to Thigh 510 650 Sync threshold 2 V Min sync pulse width TJ = Tlow to Thigh 100 ns Sync frequency range TJ = Tlow to Thigh 160 kHz PWM COMPARATOR Delay to output COMP step 5 V to 0 V, Time to onset of OUT_A transition low 40 ns Duty cycle range TJ = Tlow to Thigh 0% 80% COMP to PWM offset TA = 25°C, 1 V TJ = Tlow to Thigh 0.7 1.3 COMP open-circuit voltage TJ = Tlow to Thigh 4.3 5.9 V COMP short-circuit current COMP = 0 V TA = 25°C, 1 mA TJ = Tlow to Thigh 0.6 1.4 VOLT × SECOND CLAMP Ramp clamp level Delta RAMP measured from onset of OUT_A to Ramp peak, COMP = 5 V TA = 25°C, 2.5 V TJ = Tlow to Thigh 2.4 2.6 UVLO SHUTDOWN Undervoltage shutdown threshold TA = 25°C, 2.5 V TJ = Tlow to Thigh 2.44 2.56 Undervoltage shutdown hysteresis TA = 25°C, 20 µA TJ = Tlow to Thigh 16 24 OUTPUT SECTION OUT_A high saturation MOS device at Iout = –10 mA TA = 25°C, 5 Ω TJ = Tlow to Thigh 10 OUTPUT_A peak current sink Bipolar Device at Vcc/2 3 A OUT_A low saturation MOS device at Iout = 10 mA TA = 25°C, 6 Ω TJ = Tlow to Thigh 9 OUTPUT_A rise time Cgate = 2.2 nF 20 ns OUTPUT_A fall time Cgate = 2.2 nF 15 ns OUT_B high saturation MOS device at Iout = –10 mA TA = 25°C, 10 Ω TJ = Tlow to Thigh 20 OUTPUT_B peak current sink Bipolar device at Vcc/2 1 A |
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