© 2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KA78M05 / LM78M05 / MC78M05 Rev. 2.5

3

Electrical Characteristics

Refer to the test circuits, -40 < TJ < +125°C, IO = 350 mA, VI = 10 V, CI = 0.33 μF, CO = 0.1 μF unless otherwise speci-

fied.(4)

Notes:

4. The parameters are guaranteed across the temperature range by characterization.

5. Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects must be

taken into account separately. Pulse testing with low duty is used.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VO

Output Voltage

TJ = +25°C

4.8

5.0

5.2

V

IO = 5 mA to 350 mA,

VI = 7 V to 20 V

4.75

5.00

5.25

ΔVO

Line Regulation(5)

IO = 200 mA

TJ = +25°C

VI = 7 V to 25 V

100

mV

VI = 8 V to 25 V

50

ΔVO

Load Regulation(5)

IO = 5 mA to 0.5 A, TJ = +25°C

100

mV

IO = 5 mA to 200 mA, TJ = +25 °C50

IQ

Quiescent Current

TJ = +25°C4.0

6.0

mA

ΔIQ

Quiescent Current Change

IO = 5 mA to 350 mA

0.5

mA

IO = 200 mA,

VI = 8 V to 25 V

0.8

ΔV/ΔT

Output Voltage Drift

IO = 5 mA

TJ = -40 to +125°C

-0.5

mV/

°C

VN

Output Noise Voltage

f = 10 Hz to 100 kHz

40

μV/Vo

RR

Ripple Rejection

f = 120 Hz, IO = 300 mA

VI = 8 V to 18 V, TJ = +25 °C

80

dB

VD

Dropout Voltage

TJ = +25°C, IO = 500 mA

2

V

ISC

Short-Circuit Current

TJ = +25°C, VI = 35 V

300

mA

IPK

Peak Current

TJ = +25°C700

mA