DS501-00070-2v1-E

17

MB85R8M2TA



POWER ON/OFF SEQUENCE



FeRAM CHARACTERISTICS

Item

Min

Max

Unit

Parameter

Read/Write Endurance*1

1014

―

Times

Operation Ambient Temperature

TA = + 85 °C

Data Retention*2

40

―

Years

Operation Ambient Temperature

TA = + 85 °C

95

―

Operation Ambient Temperature

TA = + 55 °C

≥ 200

―

Operation Ambient Temperature

TA = + 35 °C

*1: The values for Read/Write Endurance apply to the total number of read and write operations per row in

FeRAM. This is because FeRAM needs writing operation after each reading operations. When

switching rows, the number of Read/Write operations is counted for each selected row. However, if

only addresses A0 and A1 are switched, no row switching occurs. The memory consists of 64 internal

outputs per row, and switching only A0 and A1 selects 16 of these outputs. Each row in the memory

array has 64 internal outputs, and 16 outputs are selected by A0 and A1. Therefore, once a certain

address is selected, switching only A0 and A1 does not change the selected row, and the Read/Write

count is totaled as one operation. For other address switches, each corresponding row is counted once.

*2: The minimum value of Date Retention refers to data retention term from first read/write after the device

shipped. The value is estimated from qualification results.



NOTE ON USE

• We recommend programming of the device after reflow. Data written before reflow cannot be

guaranteed.

* : /CE (Max) < V

DD+0.3V

/CE Don’t Care

t

PD

t

PU

/CE >V

DD×0.8*

/CE>V

DD×0.8*

t

VF

t

VR

/CE

V

DD

V

SS

V

IH(Min)

V

IL(Max)

V

DD(Min)

1.0V

V

DD

V

IH(Min)

V

IL(Max)

V

SS