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VND920 Datasheet(PDF) 17 Page - STMicroelectronics

Part # VND920
Description  Double channel high-side solid-state relay
PDF  26 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VND920 Datasheet(HTML) 17 Page - STMicroelectronics

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VND920
Application information
Doc ID 7767 Rev 6
17/26
3
Application information
Figure 19.
Application schematic
3.1
GND protection network against reverse battery
3.1.1
Solution 1: resistor in the ground line (RGND only)
This can be used with any type of load.
The following is an indication on how to dimension the RGND resistor.
1.
RGND ≤ 600 mV / (IS(on)max).
2.
RGND ≥ (-VCC) / (-IGND)
where - IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in RGND (when VCC < 0: during reverse battery situations) is:
PD = (-VCC)
2/ R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high-side drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
VCC1
OUTPUT2
C. SENSE 1
Dld
+5V
Rprot
OUTPUT1
RSENSE1,2
INPUT1
C. SENSE 2
INPUT2
μC
Rprot
Rprot
Rprot
DGND
RGND
VGND
GND1
GND2
VCC2
Obsolete
Product(s)
- Obsolete
Product(s)



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