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DRV8801RTYR.B Datasheet(PDF) 12 Page - Texas Instruments |
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DRV8801RTYR.B Datasheet(HTML) 12 Page - Texas Instruments |
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12 / 39 page ![]() 8.3.3.1 Connecting VPROPI Output to ADC The analog output VPROPI varies proportionally with the SENSE voltage according to Equation 1. It’s important to note even if VSENSE is negative VPROPI will remain at 0 V. SENSE VPROPI 5 V u (1) An RC network in series with the VPROPI output is recommended, if this voltage is to be sampled by an analog to digital converter. Figure 8-3. RC Network in Series With the VPROPI Output It is imperative to realize that VPROPI will decrease to 0 V while the H-Bridge enters slow decay recirculation. 8.3.4 Charge Pump The charge pump is used to generate a supply above VBB to drive the source-side DMOS gates. A 0.1-μF ceramic monolithic capacitor should be connected between CP1 and CP2 for pumping purposes. A 0.1-μF ceramic monolithic capacitor, CStorage, should be connected between VCP and VBB to act as a reservoir to run the high-side DMOS devices. The VCP voltage level is internally monitored and, in the case of a fault condition, the outputs of the device are disabled. 8.3.5 Shutdown As a measure to protect the device, faults caused by very high junction temperatures or low voltage on VCP disable the outputs of the device until the fault condition is removed. At power on, the UVLO circuit disables the drivers. 8.3.6 Low-Power Mode Control input nSLEEP is used to minimize power consumption when the DRV880x is not in use. A logic low on the nSLEEP input disables much of the internal circuitry, including the internal voltage rails and charge pump. A logic high on this input pin results in normal operation. When switching from low to high, the user should allow a 1-ms delay before applying PWM signals. This time is needed for the charge pump to stabilize. 8.3.7 Braking The braking function is implemented by driving the device in slow-decay mode (MODE 1 pin is high) and deasserting the enable to low. Because it is possible to drive current in both directions through the DMOS switches, this configuration effectively shorts out the motor-generated BEMF as long as the ENABLE chop mode is asserted. The maximum current can be approximated by VBEMF/RL. Care should be taken to ensure that the maximum ratings of the device are not exceeded in worse-case braking situations – high-speed and high-inertia loads. 8.3.8 Diagnostic Output The nFAULT pin signals a problem with the chip via an open-drain output. A motor fault, undervoltage condition, or TJ > 160°C drives the pin low. This output is not valid when nSLEEP puts the device into minimum power dissipation mode (that is, nSLEEP is low). nFAULT stays asserted (nFAULT = L) until VBB reaches VBBNFR to give the charge pump headroom to reach its undervoltage threshold. nFAULT is a status-only signal and does DRV8800, DRV8801 SLVS855K – JULY 2008 – REVISED MARCH 2021 www.ti.com 12 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: DRV8800 DRV8801 |
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