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TLV314IDBVT Datasheet(PDF) 6 Page - Texas Instruments |
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TLV314IDBVT Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 41 page ![]() 6 TLV314, TLV2314, TLV4314 SBOS754A – MARCH 2016 – REVISED MARCH 2016 www.ti.com Product Folder Links: TLV314 TLV2314 TLV4314 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not supported. (2) Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be current limited to 10 mA or less. (3) Short-circuit to ground, one amplifier per package. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage 7 V Signal input pins Voltage(2) (V–) – 0.5 (V+) + 0.5 V Current(2) –10 10 mA Output short-circuit(3) Continuous mA Temperature Specified, TA –40 125 °C Junction, TJ 150 Storage, Tstg –65 150 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VS Supply voltage Single supply 1.8 5.5 V Dual supply ±0.9 ±2.75 Specified temperature range –40 125 °C |
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