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TLV314IDBVT Datasheet(PDF) 7 Page - Texas Instruments

Part # TLV314IDBVT
Description  TLVx314 3-MHz, Low-Power, Internal EMI Filter, RRIO, Operational Amplifier
PDF  41 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

TLV314IDBVT Datasheet(HTML) 7 Page - Texas Instruments

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TLV314, TLV2314, TLV4314
www.ti.com
SBOS754A – MARCH 2016 – REVISED MARCH 2016
Product Folder Links: TLV314 TLV2314 TLV4314
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.4 Thermal Information: TLV314
THERMAL METRIC(1)
TLV314
UNIT
DBV (SOT-23)
DCK (SC70)
5 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
228.5
281.4
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
99.1
91.6
°C/W
RθJB
Junction-to-board thermal resistance
54.6
59.6
°C/W
ψJT
Junction-to-top characterization parameter
7.7
1.5
°C/W
ψJB
Junction-to-board characterization parameter
53.8
58.8
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Thermal Information: TLV2314
THERMAL METRIC(1)
TLV2314
UNIT
D (SOIC)
DGK (VSSOP)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
138.4
191.2
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
89.5
61.9
°C/W
RθJB
Junction-to-board thermal resistance
78.6
111.9
°C/W
ψJT
Junction-to-top characterization parameter
29.9
5.1
°C/W
ψJB
Junction-to-board characterization parameter
78.1
110.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.6 Thermal Information: TLV4314
THERMAL METRIC(1)
TLV4314
UNIT
D (SOIC)
PW (TSSOP)
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance
93.2
121
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
51.8
49.4
°C/W
RθJB
Junction-to-board thermal resistance
49.4
62.8
°C/W
ψJT
Junction-to-top characterization parameter
13.5
5.9
°C/W
ψJB
Junction-to-board characterization parameter
42.2
62.2
°C/W



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