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FDS4465 Datasheet(PDF) 4 Page - ON Semiconductor

Part # FDS4465
Description  P-Channel 1.8V Specified PowerTrench® MOSFET
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDS4465 Datasheet(HTML) 4 Page - ON Semiconductor

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FDS4465 Rev C3 (W)
Typical Characteristics
0
10
20
30
40
50
00.511.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
V
GS = -4.5V
-2.5V
-2.0V
-1.8V
-1.5V
0.6
1
1.4
1.8
2.2
2.6
3
0
1020
304050
-ID, DRAIN CURRENT (A)
V
GS = -1.5V
-4.5V
-2.0V
-2.5V
-1.8V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (
oC)
ID = -13.5A
VGS = -10V
0
0.005
0.01
0.015
0.02
0.025
0
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
I
D = -6.3A
TA = 125
oC
T
A = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
00.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
V
DS = -5.0V
0.0001
0.001
0.01
0.1
1
10
100
00.2
0.4
0.6
0.811.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS = 0V
TA = 125
oC
25
oC
-55
oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.



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