FDS4465 Rev C3 (W)

Typical Characteristics

0

1

2

3

4

5

0

2040

6080

100

Qg, GATE CHARGE (nC)

I

D = -13.5A

V

DS = -5V

-10V

-15V

0

2000

4000

6000

8000

10000

0

5

10

15

20

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

C

OSS

CRSS

f = 1 MHz

V

GS = 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

-VDS, DRAIN-SOURCE VOLTAGE (V)

DC

10s

1s

100ms

100

µs

RDS(ON) LIMIT

V

GS = -4.5V

SINGLE PULSE

RθJA = 125

oC/W

T

A = 25

oC

10ms

1ms

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

t1, TIME (sec)

SINGLE PULSE

RθJA = 125°C/W

T

A = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

RθJA(t) = r(t) + RθJA

RθJA = 125

oC/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1

t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.