2012 Fairchild Semiconductor Corporation

FDS4465 Rev C3 (W)

FDS4465

P-Channel 1.8V Specified PowerTrench







 MOSFET

General Description

This P-Channel 1.8V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (1.8V – 8V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –13.5 A, –20 V. R

DS(ON) = 8.5 m

Ω @ V

GS = –4.5 V

RDS(ON) = 10.5 m

Ω @ V

GS = –2.5 V

RDS(ON) = 14 m

Ω @ V

GS = –1.8 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• High current and power handling capability

S

D

S

S

SO-8

D

D

D

G

D

D

D

D

S

S

S

G

Pin 1

SO-8

4

3

2

1

5

6

7

8

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–20

V

VGSS

Gate-Source Voltage

±8

V

ID

Drain Current

– Continuous

(Note 1a)

–13.5

A

– Pulsed

–50

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.5

PD

(Note 1c)

1.2

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1c)

125

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4465

FDS4465

13’’

12mm

2500 units

September 2014