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TLV8541DBVR Datasheet(PDF) 21 Page - Texas Instruments |
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TLV8541DBVR Datasheet(HTML) 21 Page - Texas Instruments |
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21 / 42 page ![]() 1 2 3 4 5 6 7 14 13 12 11 10 9 8 + + A D + + B C OUTA -INA +INA V+ +INB -INB OUTB OUTD -IND +IND V- +INC -INC OUTC VOUTA RF RG GND VIN Place components close to device and to each other to reduce parasitic error Run the input traces as far away from the supply lines as possible xx GND V+ Place low-ESR ceramic bypass capacitor close to device x x x x GND x 21 TLV8544, TLV8542, TLV8541 www.ti.com SNOSD29E – DECEMBER 2016 – REVISED APRIL 2018 Product Folder Links: TLV8544 TLV8542 TLV8541 Submit Documentation Feedback Copyright © 2016–2018, Texas Instruments Incorporated 11 Layout 11.1 Layout Guidelines • The V+ pin must be bypassed to ground with a low ESR capacitor. • The optimum placement is closest to the V+ and ground pins. • Take care to minimize the loop area formed by the bypass capacitor connection between V+ and ground. • Connect the ground pin to the PCB ground plane at the pin of the device. • Place the feedback components as close as possible to the device to minimize stray impedance. 11.2 Layout Example Figure 38. Layout Example of a Typical Dual Channel Package (Top View) |
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