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TLV8541DBVR Datasheet(PDF) 21 Page - Texas Instruments

Part # TLV8541DBVR
Description  TLV854x 500-nA, RRIO, Nanopower Operational Amplifiers for Cost-Optimized Systems
PDF  42 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

TLV8541DBVR Datasheet(HTML) 21 Page - Texas Instruments

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+
+
A
D
+
+
B
C
OUTA
-INA
+INA
V+
+INB
-INB
OUTB
OUTD
-IND
+IND
V-
+INC
-INC
OUTC
VOUTA
RF
RG
GND
VIN
Place components close to
device and to each other to
reduce parasitic error
Run the input traces as
far away from the supply
lines as possible
xx
GND
V+
Place low-ESR ceramic
bypass capacitor close to
device
x
x
x
x
GND
x
21
TLV8544, TLV8542, TLV8541
www.ti.com
SNOSD29E – DECEMBER 2016 – REVISED APRIL 2018
Product Folder Links: TLV8544 TLV8542 TLV8541
Submit Documentation Feedback
Copyright © 2016–2018, Texas Instruments Incorporated
11 Layout
11.1 Layout Guidelines
•
The V+ pin must be bypassed to ground with a low ESR capacitor.
•
The optimum placement is closest to the V+ and ground pins.
•
Take care to minimize the loop area formed by the bypass capacitor connection between V+ and ground.
•
Connect the ground pin to the PCB ground plane at the pin of the device.
•
Place the feedback components as close as possible to the device to minimize stray impedance.
11.2 Layout Example
Figure 38. Layout Example of a Typical Dual Channel Package (Top View)



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