TLV9101 datasheet(28/91 Pages) TI2

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7.3.6 Electrical Overstress

Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress

(EOS). These questions tend to focus on the device inputs, but can involve the supply voltage pins or even

the output pin. Each of these different pin functions have electrical stress limits determined by the voltage

breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to

the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them

from accidental ESD events both before and during product assembly.

Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is

helpful. Figure 7-8 shows an illustration of the ESD circuits contained in the TLV910x (indicated by the dashed

line area). The ESD protection circuitry involves several current-steering diodes connected from the input and

output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device

or the power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to remain

inactive during normal circuit operation.

Power-Supply

ESD Cell

100 Ÿ

VSS

VDD

IN±

IN+

TVS

VIN

+VS

±VS

TLV960x

Figure 7-8. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application

TLV9101, TLV9102, TLV9104

SBOS943E – FEBRUARY 2019 – REVISED AUGUST 2021

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TLV9101 Datasheet(PDF) 28 Page - Texas Instruments