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TPS2HCS10-Q1 Datasheet(PDF) 7 Page - Texas Instruments |
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TPS2HCS10-Q1 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 121 page  6.3 Recommended Operating Conditions (continued) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VLHI Limp home activation pin voltage, LHI VBB V VDI Limp home direct pin input voltage, DI –0.3 5.5 V TA Operating free-air temperature –40 125 °C 6.4 Thermal Information THERMAL METRIC(1) (2) TPS2HCS10-Q1 UNIT PWP 16 PINS RθJA Junction-to-ambient thermal resistance 33.0 °C/W RθJC(top) Junction-to-case (top) thermal resistance 26.2 °C/W RθJB Junction-to-board thermal resistance 9.4 °C/W ψJT Junction-to-top characterization parameter 3.0 °C/W ψJB Junction-to-board characterization parameter 9.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.1 °C/W (1) For more information about traditional and new thermal metrics, see the https://www.ti.com/lit/an/spra953c/spra953c.pdf application report. (2) The thermal parameters are based on a 4-layer PCB according to the JESD51-5 and JESD51-7 standards. 6.5 Electrical Characteristics VBB = 6V to 18V, VDD = 3.0V to 5.5V, TJ = –40°C to 150°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT VOLTAGE AND CURRENT VClamp VDS clamp voltage IOUT = 10mA VBB > 28V TJ = 25°C to 150°C 35 40 45 V IOUT = 10mA 12V < VBB < 28V TJ = –40°C to 150°C 30 34 38 V IOUT = 10mA VBB = 3V TJ = –40°C to 150°C 27.5 36.5 V VVBB_UVLOR VBB undervoltage lockout rising Measured with respect to the GND pin of the device. 3.0 3.5 4.0 V VVBB_UVLOF VBB undervoltage lockout falling 2.6 2.8 3.0 V VBB_UV_WRN_R VBB voltage UV_WRN rising threshold Measured with respect to the GND pin of the device. 4.9 V VBB_UV_WRN_F VBB voltage UV_WRN falling threshold threshold 4.5 V VVDD_UVLOR VVDD undervoltage lockout rising Measured with respect to the GND pin of the device 1.94 2.2 V VVDD_UVLOF VVDD undervoltage lockout falling 1.86 2.07 V ISLEEP,VBB Sleep current (total device leakage including all MOSFET channels) VBB ≤ 18V, device in SLEEP mode, VOUT = 0V TJ = 25°C 0.5 µA TJ = 85°C 2.2 µA ISLEEP,VDD Sleep current from VDD pin VVDD ≤ 5.5V, device in SLEEP mode, VOUT = 0V TJ = 25°C 0.3 µA TJ = 85°C 0.5 µA www.ti.com TPS2HCS10-Q1 SLVSGY2A – OCTOBER 2023 – REVISED OCTOBER 2025 Copyright © 2025 Texas Instruments Incorporated Submit Document Feedback 7 Product Folder Links: TPS2HCS10-Q1 |
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