9 Device and Documentation Support

9.1 Documentation Support

9.1.1 Related Documentation

For related documentation, see the following:

• Texas Instruments, Implications of Slow or Floating CMOS Inputs application note

• Texas Instruments, High Speed Layout Guidelines

• Texas Instruments, USB 2.0 Board Design and Layout Guidelines

9.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Notifications to register and receive a weekly digest of any product information that has changed. For change

details, review the revision history included in any revised document.

9.3 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

9.4 Trademarks

TI E2E™ is a trademark of Texas Instruments.

All trademarks are the property of their respective owners.

9.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

9.6 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

10 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision F (August 2015) to Revision G (October 2024)

Page

• Changed the Pin Configuration images and removed the RSW bottom view pinout......................................... 3

• Removed footnote in Absolute Maximum Ratings which stated "The input and output voltage ratings may be

exceeded if the input and output clamp-current ratings are observed."............................................................. 4

• Changed XTALK from -54dB to -32dB............................................................................................................... 5

• Changed OISO from -40dB to -32dB..................................................................................................................5

• Changed BW from 900MHz to 1400GHz and removed CL = 5pF from Test Conditions....................................5

• Changed the Gain vs Frequency graph..............................................................................................................7

• Changed the Crosstalk (XTALK) graph................................................................................................................ 7

• Changed the Off Isolation (OISO) graph..............................................................................................................7

• Removed the 50Ω pulldown resistor on VOUT1 from the Off Isolation (OISO) image........................................ 8

• Added the text D next to VIN the Crosstalk (XTALK) image..................................................................................8

TS3USB30E

SCDS255G – DECEMBER 2008 – REVISED OCTOBER 2024

www.ti.com

16

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Product Folder Links: TS3USB30E