M48T212A datasheet(5/20 Pages) STMICROELECTRONICS

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M48T212A

Table 6. Capacitance (1)

(TA = 25 °C, f = 1 MHz)

Note: 1. Sampled only, not 100% tested.

2. Outputs deselected.

Table 7. DC Characteristics

(TA = 0 to 70°C; VCC = 3V to 3.6V)

Note: 1. Outputs deselected.

2. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100KΩ resistor.

3. For IRQ/FT & RST pins (Open Drain).

4. Conditioned outputs (E1CON - E2CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage cur-

rents will reduce battery life.

5. External SRAM must match TIMEKEEPER Controller chip VCC specification.

6. When fully charged.

Symbol

Parameter

Test Condition

Min

Max

Unit

CIN

Input Capacitance

VIN = 0V

COUT

(2)

Input/Output Capacitance

VOUT = 0V

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI

(1,2)

Input Leakage Current

≤ VIN ≤ VCC

±1

µA

ILO

(1)

Output Leakage Current

≤ VOUT ≤ VCC

±1

µA

ICC

Supply Current

Outputs Open

ICC1

Supply Current (Standby) TTL

E = VIH

3mA

ICC2

Supply Current (Standby) CMOS

E = VCC –0.2

2mA

IBAT

Battery Current OSC ON

575

800

Battery Current OSC OFF

100

VIL

Input Low Voltage

–0.3

0.8

VIH

Input High Voltage

2.0

VCC + 0.3

VOL

Output Low Voltage

IOL = 2.1mA

0.4

Output Low Voltage (open drain) (3)

IOL = 10mA

0.4

VOH

Output High Voltage

IOH = –1.0mA

2.4

VOHB

(4)

VOH Battery Back-up

IOUT2 = –1.0µA

2.0

3.6

IOUT1

(5)

VOUT Current (Active)

VOUT1 > VCC –0.3

IOUT2

VOUT Current (Battery Back-up)

VOUT2 > VBAT –0.3

100

µA

VPFD

Power-fail Deselect Voltage

2.7

2.9

3.0

VSO

Battery Back-up Switchover Voltage

VPFD –100mV

VBAT

Battery Voltage

3.0

VCAP

Capacitor Voltage (6)

VCC

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