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RZ/G2E Datasheet(PDF) 114 Page - Renesas Technology Corp |
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RZ/G2E Datasheet(HTML) 114 Page - Renesas Technology Corp |
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114 / 169 page ![]() RZ/G Series, 2nd Generation Datasheet Section 3. Electrical Characteristics R01DS0483EJ0101 Rev.1.01 Page 114 of 169 Jun 30, 2025 3.21 I2C Table 3.21.1 I2C Signal Timing Conditions: VDDQ33 = 3.3 ± 0.2 V, VDDQ18 = 1.8 V ± 0.1 V [RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N], VDDQ33 = 3.3 ± 0.3 V, VDDQ18 = 1.8 V ± 0.1 V, VDDQ_SDn = 3.3 ± 0.3 V / 1.8 V ± 0.1 V [RZ/G2E], GND = VSS = 0 V, Tc = -40 to +115 °C [RZ/G2H, RZ/G2M V1.3], Ta = -40 to +85 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], Tj = -40 to +115 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], CL = 400 pF Item Symbol Min. Typ. Max. Unit Figures I2C_SCL frequency tICYC — — 400 kHz Figure 3.21.1 I2C_SCL low level time tLOW 1/(2 * tICYC) - 100 — — ns I2C_SCL high level time tHIGH 600 — — ns I2C_SCL/I2C_SDA falling time tICF — — 250 ns I2C_SDA bus free time tICBF 1300 — — ns I2C_SCL start condition hold time tICH 600 — — ns I2C_SCL repeat-start condition setup time tICS 600 — — ns I2C_SDA stop condition setup time tICST 600 — — ns I2C_SDA setup time tDAS 100 — — ns I2C_SDA hold time tICDH 0 — 900 ns Figure 3.21.1 I2C Signal Timing RZ/G2H RZ/G2M V1.3 RZ/G2N RZ/G2E RZ/G2M V3.0 |
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