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STGE50NC60WD Datasheet(PDF) 3 Page - STMicroelectronics |
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STGE50NC60WD Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STGE50NC60WD Electrical ratings 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltagesGS = 0) 600 V IC (1) 1. Calculated according to the iterative formula: Collector current (continuous) at TC = 25°C 100 A IC (1) Collector current (continuous) at TC = 100°C 50 A ICL (2) 2. Pulse width limited by Tjmax Collector current (pulsed) 250 A VGE Gate-emitter voltage ± 20 V IF Diode RMS forward current at Tc=25°C 30 A PTOT Total dissipation at TC = 25°C 260 W Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature Table 3. Thermal resistance Symbol Parameter Min Typ Max Unit Rthj-case Thermal resistance junction-case (IGBT) -- -- 0.48 °C/W Rthj-case Thermal resistance junction-case (diode) -- -- 1.5 °C/W Rthj-amb Thermal resistance junction-amb -- -- 50 °C/W I C T C () T JMAX T C – R THJ C – V CESAT MAX () T C I C , () × ------------------------------------------------------------------------------------------------------ = |
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