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STV270N4F3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STV270N4F3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() October 2008 Rev 3 1/12 12 STV270N4F3 N-channel 40 V, 1.25 m Ω, 270 A, PowerSO-10 STripFET™ Power MOSFET Features ■ Conduction losses reduced ■ Low profile, very low parasitic inductance Applications ■ Switching application Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram and connection diagram (top view) Type VDSS RDS(on) max ID (1) 1. Current limited by package STV270N4F3 40 V < 1.5 m Ω 270 A 1 10 PowerSO-10 Table 1. Device summary Order code Marking Package Packaging STV270N4F3 270N4F3 PowerSO-10 Tape and reel www.st.com |
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