STV270N4F3 datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STV270N4F3

Description	N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET??Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

STV270N4F3

Electrical characteristics

5/12

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

Turn-on delay time

Rise time

VDD = 20 V, ID = 80 A

RG= 4.7 Ω, VGS= 10 V

(see Figure 13)

180

td(off)

Turn-off delay time

Fall time

VDD = 20 V, ID = 80 A

RG= 4.7 Ω, VGS= 10 V,

(see Figure 13)

110

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

270

1080

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 80 A, VGS = 0

1.3

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 160 A,di/dt = 100 A/µs

VDD = 32 V, Tj = 150 °C

(see Figure 15)

225

3.2

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