STV270N4F3 datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STV270N4F3

Description	N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET??Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical characteristics

STV270N4F3

4/12

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating,

VDS = Max rating, Tc=125 °C

100

µA

IGSS

Gate body leakage

current (VDS = 0)

VDS = ± 20 V

±200

VGS(th)

Gate threshold voltage VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 80 A

1.25

1.5

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 10 V, ID= 100 A

200

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS =0

7500

1900

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 20 V, ID= 160 A,

VGS= 10 V

(see Figure 14)

110

150

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