SI3433CDV datasheet(3/7 Pages) VISHAY

3 / 7 page

Document Number: 68803

S-81950-Rev. A, 25-Aug-08

www.vishay.com

Vishay Siliconix

Si3433CDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =5thru 2 V

VGS =1.5 V

VGS =1 V

VDS - Drain-to-Source Voltage (V)

0.00

0.02

0.04

0.06

0.08

0.10

VGS =4.5 V

VGS =1.8V

VGS =2.5 V

ID - Drain Current (A)

VDS =16 V

ID =5.2 A

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.3

0.6

0.9

1.2

1.5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

500

1000

1500

2000

2500

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

- 50

- 25

100

125

150

VGS =1.8V;ID =2A

VGS =4.5 V;2.5 V;ID =5.2 A

TJ -Junction Temperature (°C)

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