SI3433CDV datasheet(4/7 Pages) VISHAY

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Document Number: 68803

S-81950-Rev. A, 25-Aug-08

Vishay Siliconix

Si3433CDV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

TJ = 25 °C

TJ = 125 °C

ID = - 5.2 A

VGS - Gate-to-Source Voltage (V)

1000

0.1

0.01

0.001

100

Time (s)

Safe Operating Area

100

0.1

100

0.01

0.1

TA =25 °C

Single Pulse

Limited byRDS(on)*

BVDSS Limited

1ms

100 µs

10 ms

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

1 s, 10 s

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