TLE2144MDWREP datasheet(6/22 Pages) TI

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Analog Integrated Circuit Device Data

Freescale Semiconductor

34830

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

ELECTRICAL PERFORMANCE CURVES

Plots are taken under conditions VCC = 4.0V, RFREQ = 9.0kΩ, RL =150Ω, TA = 27°C, unless otherwise noted.

Figure 4. Frequency Response Magnitude

Figure 5. -1dB Bandwidth vs. RFREQ (kΩ)

Table 4. Dynamic Electrical Characteristics

Characteristics noted under conditions VCC = 3.0V to 5.5V, TA = -40°C to 85°C, RFREQ = 9.0kΩ, CIN = 0.1μs, RL =150Ω, CL

= 5.0pF. Typical values are at TA = 27°C, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

Low Frequency Gain (@100kHz)

1.9

2.0

2.1

V/V

Small-signal 1.0 dB Bandwidth

RFREQ = 108kΩ

RFREQ = 9kΩ)

BW1SS

130

MHz

Differential Gain (3-step measurement, RFREQ = 108kΩ, f = 4.0MHz)

0.3

1.0

Differential Phase (3-step measurement, RFREQ = 108kΩ, f = 4.0MHz)

0.3

1.0

deg

Total Harmonic Distortion (VIN = 0.65V + 700mVP-P , 60MHz sine wave)

THD

0.65

DC Group Delay (at 100kHz)

2.8

Group Delay Deviation (f = 100kHz to 60 MHz)

ΔtG

0.5

Slew Rate (VOUT = 2V step)

450

μs

Settling Time to 10% (VOUT = 2VPP)

4.0

Peak Signal to Noise Ratio (VOUT = 2.0Vp-p, f=100Hz to 200 MHz)

SNR

Power Supply Rejection (Measured at 100kHz with 100mVpp sinewave ripple

on VCC.)

PSR

-40

-35

-30

-25

-20

-15

-10

-5

0.1

100

1000

FREQUENCY (MHz)

RFREQ=9kΩ

RFREQ=108kΩ

FREQUENCY (MHz)

105

115

125

135

145

2030405060

708090

100

110

120

RFREQ, BANDWIDTH SETTING RESISTOR (k )

RFREQ, BANDWIDTH SETTING RESISTOR (kΩ)

TLE2144MDWREP Datasheet(PDF) 6 Page - Texas Instruments

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