SPC4516 datasheet(4/12 Pages) SYNC-POWER

4 / 12 page

2008/03/05

Ver.1

Page 4

SPC4516

N & P Pair Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS ( PMOS )

(TA=25

Unless otherwise noted)

℃

Parameter

Symbol

Conditions

Min.

Typ

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS VGS=0V,ID=-250uA

-30

Gate Threshold Voltage

VGS(th) VDS=VGS,ID=-250uA

-1.0

-3.0

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

VDS=-24V,VGS=0V

-1

Zero Gate Voltage Drain Current

IDSS

VDS=-24V,VGS=0V

TJ=85℃

-5

On-State Drain Current

ID(on)

VDS= -5V,VGS =-4.5V

-40

VGS=-10V,ID=-7.2A

0.022

0.025

Drain-Source On-Resistance

RDS(on)

VGS=-4.5V,ID=-5.6A

0.030

0.040

Ω

Forward Transconductance

gfs

VDS=-10V,ID=-9.0A

Diode Forward Voltage

VSD

IS=-2.3A,VGS =0V

-0.8

-1.2

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

VDS=-15V,VGS=-10V

ID= -9.0A

4.5

Input Capacitance

Ciss

1650

Output Capacitance

Coss

350

Reverse Transfer Capacitance

Crss

VDS=-15V,VGS=0V

f=1MHz

235

td(on)

Turn-On Time

td(off)

110

Turn-Off Time

VDD=-15V,RL=15Ω

ID≡-1.0A,VGEN=-10V

RG=6Ω

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