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SC9RS08KA2 Datasheet(PDF) 120 Page - Freescale Semiconductor, Inc |
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SC9RS08KA2 Datasheet(HTML) 120 Page - Freescale Semiconductor, Inc |
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120 / 134 page  Appendix A Electrical Characteristics SC9RS08KA2 Series Data Sheet, Rev. 1 120 Freescale Semiconductor Table A-9. FLASH Characteristics Characteristic Symbol Min Typical1 1 Typicals are measured at 25 °C. Max Unit Supply voltage for program/erase VDD 2.7 — 5.5 V Program/Erase voltage VPP 11.8 12 12.2 V VPP current Program Mass erase IVPP_prog IVPP_erase — — — — 200 100 μA μA Supply voltage for read operation 0 < fBus < 10 MHz VRead 1.8 — 5.5 V Byte program time tprog 20 — 40 μs Mass erase time tme 500 — — ms Cumulative program HV time2 2 t hv is the cumulative high voltage programming time to the same row before next erase. Same address can not be programmed more than twice before next erase. thv —— 8 ms Total cumulative HV time (total of tme & thv applied to device) thv_total — — 2 hours HVEN to program setup time tpgs 10 — — μs PGM/MASS to HVEN setup time tnvs 5— — μs HVEN hold time for PGM tnvh 5— — μs HVEN hold time for MASS tnvh1 100 — — μs VPP to PGM/MASS setup time tvps 20 — — ns HVEN to VPP hold time tvph 20 — — ns VPP rise time 3 3 Fast V PP rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad and cause permanent damage to the pad. External filtering for the VPP power source is recommended. An example VPP filter is shown in Figure A-3. tvrs 200 — — ns Recovery time trcv 1— — μs Program/erase endurance TL to TH = –40°C to + 85°C — 1000 — — cycles Data retention tD_ret 15 100 — years |
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