IKCS12F60B2C datasheet(11/18 Pages) INFINEON

11 / 18 page

CIPOS™ IKCS12F60B2A

IKCS12F60B2C

Data Sheet

11/18

Rev. 2.2, March 2009

Dynamic Characteristics

(Tc = 25°C, VDD = 15V, if not stated otherwise)

Value

Description

Condition

Symbol

min

typ

max

Unit

Turn-on propagation delay

High side or low side

VLIN,HIN = 0V; Iout = 6A,

VDC = 300V

td(on)

638

Turn-on rise time

High side or low side

VLIN,HIN = 5V Iout = 6A,

VDC = 300V

Turn-off propagation delay

High side or low side

VLIN,HIN = 5V; Iout = 6A,

VDC = 300V

td(off)

812

Turn-off fall time

High side or low side

VLIN,HIN = 0V Iout = 6A,

VDC = 300V

Shutdown propagation delay ITRIP

VITRIP = 1V, Iu, Iv, Iw = 6A

tITRIP

900

Input filter time ITRIP

VITRIP = 1V

tITRIPmin

155

210

380

Input filter time at LIN for turn on

and off and input filter time at HIN

for turn on only

VLIN,HIN = 0 V & 5V

tFILIN

120

270

Input filter time at HIN for turn off

VHIN = 5V

tFILIN1

220

Input filter time at HIN for turn off

VHIN = 5 V

tFILIN2

400

Fault clear time after ITRIP-fault

VLIN,HIN = 0 V & 5V

VITRIP = 0 V

tFLTCLR

4.7

Min. deadtime between low side

and high side

DTPWM

µs

Deadtime of gate drive circuit

DTIC

380

IGBT Turn-on Energy (includes

reverse recovery of diode)

Iout = 6A, VDC = 300V

TvJ = 25°C

TvJ = 150°C

Eon

138

188

IGBT Turn-off Energy

Iout = 6A, VDC = 300V

TvJ = 25°C

TvJ = 150°C

Eoff

117

151

Diode recovery Energy

Iout = 6A, VDC = 300V

TvJ = 25°C

TvJ = 150°C

Erec

µJ

IKCS12F60B2C Datasheet(PDF) 11 Page - Infineon Technologies AG

IKCS12F60B2C Datasheet(HTML) 11 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Datasheet Download

Link URL