X84041P datasheet(6/13 Pages) XICOR

6 / 13 page

X84041

D.C. OPERATING CHARACTERISTICS (VCC = 3V ±10%)

(Over the recommended operating conditions, unless otherwise specified.)

Limits

Symbol

Parameter

Min.

Max.

Units

Test Conditions

ICC1

VCC Supply Current (Read)

250

µA

OE = VIL, WE = VIH,

I/O = Open,

CE clocking @ 2MHz

ICC2

VCC Supply Current (Write)

ICC During Nonvolatile Write Cycle

All Inputs at CMOS Levels

ISB1

VCC Standby Current

µA

CE = VCC, Other Inputs = VCC or VSS

VCC = 3V ±10%

ILI

Input Leakage Current

µAVIN = VSS to VCC

ILO

Output Leakage Current

µAVOUT = VSS to VCC

VlL(1)

Input LOW Voltage

–1

VCC x 0.3

VIH(1)

Input HIGH Voltage

VCC x 0.7

VCC + 0.5

VOL

Output LOW Voltage

0.4

IOL = 1mA, VCC = 3V ±10%

VOH

Output HIGH Voltage

VCC – 0.4

IOH = –400µA, VCC = 3V ±10%

2704 PGM T05.2

Notes: (2) Periodically sampled, but not 100% tested.

POWER-UP TIMING

Symbol

Parameter

Max.

Units

tPUR(3)

Power-up to Read Operation

tPUW(3)

Power-up to Write Operation

2704 PGM T07

A.C. CONDITIONS OF TEST

Input Pulse Levels

VCC x 0.1 to VCC x 0.9

Input Rise and Fall Times

5ns

Input and Output

VCC x 0.5

Timing Levels

2704 PGM T08.1

Notes: (1) VIL min. and VIH max. are for reference only and are not tested.

CAPACITANCE

TA = +25°C, f = 1MHz, VCC = 5V

Symbol

Parameter

Max.

Units

Test Conditions

CI/O(2)

Input/Output Capacitance

VI/O = 0V

CIN(2)

Input Capacitance

VIN = 0V

2704 PGM T06.2

Notes: (3) Time delays required from the time the VCC is stable until the specific operation can be initiated.

Periodically sampled, but not 100% tested.

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