74LVC3G17GD datasheet(6/18 Pages) NXP

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74LVC3G17_6

Product data sheet

Rev. 06 — 6 June 2008

6 of 18

NXP Semiconductors

74LVC3G17

Triple non-inverting Schmitt trigger with 5 V tolerant input

[1]

All typical values are measured at Tamb = 25 °C.

[2]

These typical values are measured at VCC = 3.3 V.

12. Dynamic characteristics

[1]

Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2]

tpd is the same as tPLH and tPHL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(CL × VCC2 × fo) = sum of outputs.

VOH

HIGH-level output voltage

VI =VIH or VIL

IO = −100 µA; VCC = 1.65 V to 5.5 V

VCC − 0.1 -

IO = −4 mA; VCC = 1.65 V

0.95

IO = −8 mA; VCC = 2.3 V

1.7

IO = −12 mA; VCC = 2.7 V

1.9

IO = −24 mA; VCC = 3.0 V

2.0

IO = −32 mA; VCC = 4.5 V

3.4

input leakage current

VI = 5.5 V or GND; VCC = 0 V to 5.5 V

±20

µA

IOFF

power-off leakage current

VI or VO = 5.5 V; VCC = 0 V

±20

µA

ICC

supply current

VI = 5.5 V or GND; IO = 0 A;

VCC = 1.65 V to 5.5 V

µA

∆ICC

additional supply current

VI =VCC − 0.6 V; IO =0A;

VCC = 2.3 V to 5.5 V

Table 7.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ[1]

Max

Unit

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

tpd

propagation delay

nA to nY; see Figure 8

[2]

VCC = 1.65 V to 1.95 V

1.5

5.6

10.5

1.5

13.1

VCC = 2.3 V to 2.7 V

1.0

3.7

6.5

1.0

8.5

VCC = 2.7 V

1.0

3.8

6.5

1.0

8.5

VCC = 3.0 V to 3.6 V

1.0

3.6

5.7

1.0

7.1

VCC = 4.5 V to 5.5 V

1.0

2.7

4.3

1.0

5.4

CPD

power dissipation

capacitance

per buffer; VCC = 3.3 V;

VI = GND to VCC

[3]

16.3

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