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IP4365CX11/P Datasheet(PDF) 4 Page - NXP Semiconductors

Part # IP4365CX11/P
Description  Integrated (U)SIM card passive filter array and USB full speed ESD protection to IEC 61000-4-2 level 4
PDF  12 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

IP4365CX11/P Datasheet(HTML) 4 Page - NXP Semiconductors

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IP4365CX11_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 26 March 2010
4 of 12
NXP Semiconductors
IP4365CX11
Integrated SIM card passive filter array and USB ESD protection
6.
Characteristics
[1]
Guaranteed by design.
7.
Application information
7.1 Application diagram
A typical application diagram showing IP4365CX11 in a SIM card interface using the
standard digital and the USB full speed interface is depicted in Figure 3. The 2 kV ESD
compliant pins (A1, B1 and C1) are connected to the baseband interface side while the six
15 kV ESD compliant pins (pins A3, B3, C3, D1, D2 and D3) are connected to the USIM
card. Pins D1, D2 and D3 are identical and can be used as required. Also the channel
A1 to A3 and the channel C1 to C3 can be exchanged in case this is required for an
easier routing.
Table 4.
Electrical characteristics
Tamb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Rs(ch)
channel series resistance R1 and R3
75
100
125
Ω
R2
35.2
47.0
58.8
Ω
Cch
channel capacitance
channel A1 to A3,
channel B1 to B3,
channel C1 to C3,
pins D1, D2 and D3;
Vbias(DC) = 0 V; f = 1 MHz
[1] 8
10
12
pF
VBR
breakdown voltage
Itest = 1 mA
6
-
10
V
ILR
reverse leakage current
VI = 3 V
-
-
50
nA
Fig 3.
Typical application diagram
008aaa217
100
Ω
R1
47
Ω
R2
100
Ω
R3
RST
CLK
I/O
baseband
D3
A3
B3
C3
A2, C2
A1
B1
C1
VSIM
SIM/smart card
AUX2
AUX1
I/O
CLK
SPU
RST
GND
VCC
D1
D2
USB
D+
D
−



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