PDTA143X_SER_4

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 04 — 16 April 2007

3 of 12

NXP Semiconductors

PDTA143X series

PNP resistor-equipped transistors; R1 = 4.7 k

Ω, R2 = 10 kΩ

3.

Ordering information

[1]

Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 4.

Ordering information

Type number

Package

Name

Description

Version

PDTA143XE

SC-75

plastic surface-mounted package; 3 leads

SOT416

PDTA143XK

SC-59A

plastic surface-mounted package; 3 leads

SOT346

PDTA143XM

SC-101

leadless ultra small plastic package; 3 solder lands;

body 1.0

× 0.6 × 0.5 mm

SOT883

PDTA143XS[1]

SC-43A

plastic single-ended leaded (through hole) package;

3 leads

SOT54

PDTA143XT

-

plastic surface-mounted package; 3 leads

SOT23

PDTA143XU

SC-70

plastic surface-mounted package; 3 leads

SOT323

Table 5.

Marking codes

Type number

Marking code[1]

PDTA143XE

35

PDTA143XK

25

PDTA143XM

DN

PDTA143XS

TA143X

PDTA143XT

*31

PDTA143XU

*46

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

−50

V

collector-emitter voltage

open base

-

−50

V

emitter-base voltage

open collector

-

−7V

input voltage

positive

-

+7

V

negative

-

−20

V

output current

-

−100

mA

peak collector current

single pulse;

-

−100

mA