PDTA143XM datasheet(5/12 Pages) NXP

5 / 12 page

PDTA143X_SER_4

Product data sheet

Rev. 04 — 16 April 2007

5 of 12

NXP Semiconductors

PDTA143X series

PNP resistor-equipped transistors; R1 = 4.7 k

Ω, R2 = 10 kΩ

Characteristics

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −50 V; IE =0A

−100

ICEO

collector-emitter

cut-off current

VCE = −30 V; IB =0A

−1

µA

VCE = −30 V; IB =0A;

Tj = 150 °C

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−600

µA

hFE

DC current gain

VCE = −5 V; IC = −10 mA

VCEsat

collector-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

−150

VI(off)

off-state input voltage

VCE = −5 V; IC = −100 µA-

−0.9

−0.3

VI(on)

on-state input voltage

VCE = −0.3 V;

IC = −20 mA

−2.5

−1.5

bias resistor 1 (input)

3.3

4.7

6.1

Ω

R2/R1

bias resistor ratio

1.7

2.1

2.6

collector capacitance

VCB = −10 V; IE =ie =0A;

f = 1 MHz

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