PSMN012-100YS_4

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Product data sheet

Rev. 04 — 23 February 2010

6 of 15

NXP Semiconductors

PSMN012-100YS

N-channel 100V 12m

Ω standard level MOSFET in LFPAK

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source

breakdown voltage

90

-

-

V

100

-

-

V

gate-source threshold

voltage

see Figure 10

0.95

-

-

V

and 10

23

4V

see Figure 10

--

4.6

V

drain leakage current

-

-

100

µA

-

0.06

5

µA

gate leakage current

-

10

100

nA

-

10

100

nA

drain-source on-state

resistance

see Figure 12

--

23

m

Ω

see Figure 12

-27

35.8

m

Ω

see Figure 13

-10

12

m

Ω

internal gate resistance

(AC)

f=1MHz

-

0.7

-

Ω

Dynamic characteristics

total gate charge

-

51

-

nC

see Figure 14 and 15

-64

-

nC

gate-source charge

-

14.9

-

nC

pre-threshold

gate-source charge

see Figure 14

-

10.2

-

nC

post-threshold

gate-source charge

-4.7

-nC

gate-drain charge

see Figure 14 and 15

-19

-

nC

gate-source plateau

voltage

-4.4

-V

input capacitance

see Figure 16

-

3500

-

pF

output capacitance

-

246

-

pF

reverse transfer

capacitance

-

149

-

pF

turn-on delay time

-23

-

ns

rise time

-

31

-

ns

turn-off delay time

-

52.5

-

ns

fall time

-

25

-

ns