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PSMN012-100YS Datasheet(PDF) 9 Page - NXP Semiconductors |
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PSMN012-100YS Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 15 page ![]() PSMN012-100YS_4 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 23 February 2010 9 of 15 NXP Semiconductors PSMN012-100YS N-channel 100V 12m Ω standard level MOSFET in LFPAK Fig 13. Drain-source on-state resistance as a function of drain current; typical values Fig 14. Gate charge waveform definitions Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aad853 0 15 30 45 0 2040 6080 ID (A) RDSon (m Ω) 5.0 4.8 5.5 VGS (V) = 10.0 4.5 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 003aad854 0 2 4 6 8 10 0 2040 6080 QG (nC) VGS (V) VDS = 50V 80V 20V 003aad851 10 10 2 10 3 10 4 10 -1 1 10 10 2 VDS (V) C (pF) Ciss Crss Coss |
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