PSMN012-100YS_4

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Product data sheet

Rev. 04 — 23 February 2010

7 of 15

NXP Semiconductors

PSMN012-100YS

N-channel 100V 12m

Ω standard level MOSFET in LFPAK

Source-drain diode

source-drain voltage

-0.8

1.2

V

reverse recovery time

-56

-

ns

recovered charge

-

129

-

nC

Table 6.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 5.

Forward transconductance as a function of

drain current; typical values

Fig 6.

Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 8.

Output characteristics: drain current as a

function of drain-source voltage; typical values

003aad849

0

30

60

90

120

0

25

50

75

100

(S)

003aad850

0

2000

4000

6000

0369

12

C

(pF)

003aad852

4

13

22

31

40

2

8

14

20

(m

Ω)

003aad847

0

30

60

90

120

012

(A)

4.5

4.8

5.0

5.5

10.0