PSMN012-100YS datasheet(1/15 Pages) NXP

Part #	PSMN012-100YS

Description	N-channel 100V 12m廓 standard level MOSFET in LFPAK

PDF	15 Pages

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Manufacturer	NXP [NXP Semiconductors]

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PSMN012-100YS

N-channel 100V 12m

Ω standard level MOSFET in LFPAK

Rev. 04 — 23 February 2010

Product data sheet

1.

Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

RDSon and low gate charge

High efficiency gains in switching

power converters

Improved mechanical and thermal

characteristics

LFPAK provides maximum power

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

ID

drain current

Tmb = 25 °C; see Figure 1

--60

A

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

-

130

W

Tj

junction temperature

-55

-

175

°C

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

VGS =10V; Tj(init) =25°C;

ID =60 A; Vsup ≤ 100 V;

RGS =50 Ω; unclamped

-

170

mJ

Dynamic characteristics

QGD

gate-drain charge

VGS =10V; ID =45 A;

VDS = 50 V; see Figure 14

and 15

-19

-

nC

QG(tot)

total gate charge

-

64

-

nC

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