R5F2M110ANDD datasheet(27/48 Pages) RENESAS

27 / 48 page

R8C/M11A Group, R8C/M12A Group

4. Electrical Characteristics

Under development Preliminary document

Specifications in this document are tentative and subject to change.

R01DS0010EJ0010 Rev.0.10

Page 27 of 45

Aug 25, 2010

Notes:

1. Vcc = 2.7 V to 5.5 V and Topr = 0

°C to 60 °C, unless otherwise specified.

2. Definition of program/erase endurance

The number of program/erase cycles is defined on a per-block basis.

If the number of cycles is 10,000, each block can be erased 10,000 times.

For example, if 1,024 cycles of 1-byte-write are performed to different addresses in 1 Kbyte of block A, and then the block is

erased, the number of cycles is counted as one. Note, however, that the same address must not be programmed more than

once before completion of an erase (overwriting prohibited).

3. This indicates the number of times up to which all electrical characteristics can be guaranteed after the last programming/

erase operation. Operation is guaranteed for any number of operations in the range of 1 to the specified minimum (Min).

4. In a system that executes multiple programming operations, the actual erase count can be reduced by shifting the write

addresses in sequence and programming so that as much of the flash memory as possible is used before performing an erase

operation. For example, when programming in 16-byte units, the effective number of rewrites can be minimized by

programming up to 128 units before erasing them all in one operation. It is also advisable to retain data on the number of

erase operations for each block and establish a limit for the number of erase operations performed.

5. If an error occurs during a block erase, execute a clear status register command and then a block erase command at least

three times until the erase error does not occur.

6. For information on the program/erase failure rate, contact a Renesas technical support representative.

7. The data hold time includes the time that the power supply is off and the time the clock is not supplied.

Table 4.5

Flash Memory (Program ROM) Electrical Characteristics

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

—

Program/erase endurance (2)

10,000 (3)

——

times

—

Byte programming time

(program/erase endurance

≤ 1,000

times)

—80

—

µs

—

Byte programming time

(program/erase endurance

> 1,000

times)

—

160

—

µs

—

Block erase time

—

0.12

—

td(SR-SUS)

Transition time to suspend

—

0.25 + CPU clock

× 3 cycles

—

Time from suspend until erase restart

—

30 + CPU clock

× 1 cycle

µs

td(CMDRST

READY)

Time from when command is forcibly

terminated until reading is enabled

—

30 + CPU clock

× 1 cycle

µs

—

Program/erase voltage

1.8

—

5.5

—

Read voltage

1.8

—

5.5

—

Program/erase temperature

—

°C

—

Data hold time (7)

Ambient temperature = 85

°C

—

years

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