R5F2M110ANDD datasheet(32/48 Pages) RENESAS

32 / 48 page

R8C/M11A Group, R8C/M12A Group

4. Electrical Characteristics

Under development Preliminary document

Specifications in this document are tentative and subject to change.

R01DS0010EJ0010 Rev.0.10

Page 32 of 45

Aug 25, 2010

Notes:

1. 4.0 V

≤ Vcc ≤ 5.5 V and Topr = -20 °C to 85 °C (N version)/-40 °C to 85 °C (D version), f(XIN) = 20 MHz, unless otherwise

specified.

2. High drive capacity can also be used while the peripheral output function is used.

Table 4.13

DC Characteristics (1) [4.0 V

≤ Vcc ≤ 5.5 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output high voltage

P1_2, P1_3, P1_4, P1_5,

P3_3, P3_4, P3_5, P3_7 (2)

When drive

capacity is high

IOH = -20 mA Vcc - 2.0

—

Vcc

When drive

capacity is low

IOH = -5 mA

Vcc - 2.0

—

Vcc

P1_0, P1_1, P1_6, P1_7,

P4_2, P4_5, P4_6, P4_7,

PA_0

IOH = -5 mA

Vcc - 2.0

—

Vcc

VOL

Output low voltage

P1_2, P1_3, P1_4, P1_5,

P3_3, P3_4, P3_5, P3_7 (2)

When drive

capacity is high

IOL = 20 mA

—

2.0

When drive

capacity is low

IOL = 5 mA

—

2.0

P1_0, P1_1, P1_6, P1_7,

P4_2, P4_5, P4_6, P4_7,

PA_0

IOL = 5 mA

—

2.0

VT+-VT-Hysteresis

INT0, INT1, INT2, INT3,

KI0, KI1, KI2, KI3,

TRJIO, TRCIOA, TRCIOB,

TRCIOC, TRCIOD,

RXD0, CLK0

Vcc = 5 V

0.1

1.2

—

RESET

Vcc = 5 V

0.1

1.2

—

IIH

Input high current

VI = 5 V, Vcc = 5.0 V

—

5.0

µA

IIL

Input low current

VI = 0 V, Vcc = 5.0 V

—

-5.0

µA

RPULLUP

Pull-up resistance

VI = 0 V, Vcc = 5.0 V

100

Ω

RfXIN

Feedback resistance XIN

—

2.2

—

Ω

VRAM

RAM hold voltage

In stop mode

1.8

—

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