R8C/M11A Group, R8C/M12A Group

4. Electrical Characteristics

Specifications in this document are tentative and subject to change.

R01DS0010EJ0010 Rev.0.10

Page 28 of 45

Aug 25, 2010

Notes:

1. Vcc = 2.7 V to 5.5 V and Topr = -20

°C to 85 °C (N version)/-40 °C to 85 °C (D version), unless otherwise specified.

2. Definition of program/erase endurance

The number of program/erase cycles is defined on a per-block basis.

If the number of cycles is 10,000, each block can be erased 10,000 times.

For example, if 1,024 cycles of 1-byte-write are performed to different addresses in 1 Kbyte of block A, and then the block is

erased, the number of cycles is counted as one. Note, however, that the same address must not be programmed more than

once before completion of an erase (overwriting prohibited).

3. This indicates the number of times up to which all electrical characteristics can be guaranteed after the last programming/

erase operation. Operation is guaranteed for any number of operations in the range of 1 to the specified minimum (Min).

4. In a system that executes multiple program operations, the actual erase count can be reduced by shifting the write addresses

in sequence and programming so that as much of the flash memory as possible is used before performing an erase operation.

For example, when programming in 16-byte units, the effective number of rewrites can be minimized by programming up to

128 units before erasing them all in one operation. It is also advisable to retain data on the number of erase operations for

each block and establish a limit for the number of erase operations performed.

5. If an error occurs during a block erase, execute a clear status register command and then a block erase command at least

three times until the erase error does not occur.

6. For information on the program/erase failure rate, contact a Renesas technical support representative.

7. The data hold time includes the time that the power supply is off and the time the clock is not supplied.

Figure 4.2

Transition Time until Suspend

Table 4.6

Flash Memory (Blocks A and B of Data Flash) Electrical Characteristics

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

—

Program/erase endurance (2)

10,000 (3)

——

times

—

Byte programming time

—

150

—

µs

—

Block erase time

—

0.05

1

s

Time delay from suspend request until

suspend

—

—

0.25 + CPU clock

× 3 cycles

ms

—

Time from suspend until erase restart

—

—

30 + CPU clock

× 1 cycle

µs

READY)

Time from when command is forcibly

stopped until reading is enabled

—

—

30 + CPU clock

× 1 cycle

µs

—

Program/erase voltage

1.8

—

5.5

V

—

Read voltage

1.8

—

5.5

V

—

Program/erase temperature

-20

(N version)

—85

°C

-40

(D version)

—85

°C

—

Data hold time (7)

Ambient temperature = 85

°C

10

—

—

years

Suspend request

(FMR21)

FST6, FST7: Bits in FST register

FMR21: Bit in FMR2 register

Fixed time

FST6

Clock-dependent

time

Access restart

FST7