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R5F2M110ANDD Datasheet(PDF) 31 Page - Renesas Technology Corp

Part # R5F2M110ANDD
Description  RENESAS MCU
PDF  48 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R5F2M110ANDD Datasheet(HTML) 31 Page - Renesas Technology Corp

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R8C/M11A Group, R8C/M12A Group
4. Electrical Characteristics
Under development Preliminary document
Specifications in this document are tentative and subject to change.
R01DS0010EJ0010 Rev.0.10
Page 31 of 45
Aug 25, 2010
Notes:
1. Vcc = 1.8 V to 5.5 V, Topr = -20
°C to 85 °C (N version)/-40 °C to 85 °C (D version), unless otherwise specified.
2. This enables the setting errors of bit rates such as 9600 bps and 38400 bps to be 0 % when the serial interface is used in
UART mode.
3. This indicates the precision error for the oscillation frequency of the high-speed on-chip oscillator.
Note:
1. Vcc = 1.8 V to 5.5 V, Topr = -20
°C to 85 °C (N version)/-40 °C to 85 °C (D version), unless otherwise specified.
Notes:
1. The measurement condition is Vcc = 1.8 V to 5.5 V and Topr = 25
°C.
2. Wait time until the internal power supply generation circuit stabilizes during power-on.
Table 4.10
High-Speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
—
High-speed on-chip oscillator frequency after
reset is cleared
Vcc = 5.0 V, Topr = 25
°CTBD
20
TBD
MHz
High-speed on-chip oscillator frequency
when the FR18S0 register adjustment value
is written into the FRV1 register and the
FR18S1 register adjustment value into the
FRV2 register (2)
TBD
18.432
TBD
MHz
High-speed on-chip oscillator frequency
dependence on temperature and power
supply voltage (3)
Vcc = 2.7 V to 5.5 V
-20
°C ≤ Topr ≤ 85 °C
TBD
—
TBD
%
Vcc = 2.7 V to 5.5 V
-40
°C ≤ Topr ≤ 85 °C
TBD
—
TBD
%
Vcc = 2.2 V to 5.5 V
-20
°C ≤ Topr ≤ 85 °C
TBD
—
TBD
%
Vcc = 2.2 V to 5.5 V
-40
°C ≤ Topr ≤ 85 °C
TBD
—
TBD
%
Vcc = 1.8 V to 5.5 V
-20
°C ≤ Topr ≤ 85 °C
TBD
—
TBD
%
Vcc = 1.8 V to 5.5 V
-40
°C ≤ Topr ≤ 85 °C
TBD
—
TBD
%
—
Oscillation stabilization time
Vcc = 5.0 V, Topr = 25
°C
—
100
450
µs
—
Self power consumption at oscillation
Vcc = 5.0 V, Topr = 25
°C
—
400
—
µA
Table 4.11
Low-Speed On-Chip Oscillator Circuit Electrical Characteristics
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
fLOCO
Low-speed on-chip oscillator frequency
60
125
250
kHz
—
Oscillation stabilization time
Vcc = 5.0 V, Topr = 25
°C
—
10
100
µs
—
Self power consumption at oscillation
Vcc = 5.0 V, Topr = 25
°C—
2
—
µA
Table 4.12
Power Supply Circuit Timing Characteristics
Symbol
Parameter
Condition
Standard
Unit
Min.
Typ.
Max.
td(P-R)
Time for internal power supply stabilization
during power-on (2)
—
—
2,000
µs



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