SPP07N60C3 datasheet(1/15 Pages) INFINEON

Part #	SPP07N60C3

Description	New revolutionary high voltage technology Ultra low gate charge

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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1 / 15 page

2007-

08-30

Rev.

3.1

Page 1

SPP07N60C3

SPI07N60C3, SPA07N60C3

Cool MOS™ Power Transistor

VDS @ Tjmax

650

V

RDS(on)

0.6

Ω

ID

7.3

A

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

PG-TO220

FP PG-TO262

2

P-TO220-3-1

2 3

1

P-TO220-3-31

1

2

3

Marking

07N60C3

Type

Package

Ordering Code

SPP07N60C3

PG-TO220

-3

Q67040-S4400

SPI07N60C3

PG-TO262

Q67040-S4424

SPA07N60C3

PG-TO220

FP

SP000216303

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

7.3

4.6

7.31)

4.61)

A

Pulsed drain current, tp limited by Tjmax

ID puls

21.9

A

Avalanche energy, single pulse

ID=5.5A, VDD=50V

EAS

230

mJ

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=7.3A, VDD=50V

EAR

0.5

Avalanche current, repetitive tAR limited by Tjmax

IAR

7.3

A

Gate source voltage static

VGS

±20

V

Gate source voltage AC (f >1Hz)

VGS

±30

Power dissipation, TC = 25°C

Ptot

83

32

W

Operating and storage temperature

Tj , Tstg

-55...+150

°C

Reverse diode dv/dt

dv/dt

15

V/ns

6)

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SPP07N60C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

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