Analog Integrated Circuit Device Data

6

Freescale Semiconductor

33932

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics

Characteristics noted under conditions 8.0 V

Specifications given for H-Bridge A apply symmetrically to H-Bridge B.

Characteristic

Symbol

Min

Typ

Max

Unit

POWER INPUTS (VPWR)

Operating Voltage Range(10)

Steady-state

Transient (t < 500 ms)(11)

8.0

–

5.0

–

–

–

28

40

8.0

V

Sleep State Supply Current(12)

–

–

50

μA

Standby Supply Current (Part Enabled)

–

–

20

mA

Under-voltage Lockout Thresholds

Hysteresis

4.15

–

150

–

–

200

–

5.0

350

V

V

mV

CHARGE PUMP

Charge Pump Voltage (CP Capacitor = 33 nF), No PWM

3.5

–

–

–

–

12

V

Charge Pump Voltage (CP Capacitor = 33 nF), PWM = 11 kHz

3.5

–

–

–

–

12

V

CONTROL INPUTS

Operating Input Voltage (IN1, IN2, D1, EN/D2, IN3, IN4, D3, EN/D4)

–

–

5.5

V

Input Voltage (IN1, IN2, D1, EN/D2, IN3, IN4, D3, EN/D4)

Logic Threshold HIGH

Logic Threshold LOW

Hysteresis

2.0

–

250

–

–

400

–

1.0

–

V

V

mV

Logic Input Currents, VPWR = 8.0 V

Inputs IN1, IN2, D1, IN3, IN4, D3 (internal pull-ups), VIL = 0 V

20

-200

80

-80

200

-20

μA

Notes

10.

Device specifications are characterized over the range of 8.0 V

reliability. Device is operational down to 5.0V, but below 8.0 V the output resistance may increase by 50 percent.

11.

Device will survive the transient over-voltage indicated for a maximum duration of 500 ms. Transient not to be repeated more than once

every 10 seconds.

12.