ZXGD3101N8 datasheet(9/14 Pages) DIODES

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ZXGD3101N8

Document Number DS31945 Rev. 1 - 2

9 of 14

www.diodes.com

June 2010

ZXGD3101N8

A Product Line of

Diodes Incorporated

SYNCHRONOU S R E CTIFIER CONTROLLER

-0.10

-0.08

-0.06

-0.04

-0.02

0.00

-0.10

-0.08

-0.06

-0.04

-0.02

0.00

Transfer Characteristic

Drain Voltage (V)

REF

= 2mA

REF

=2.5mA

REF

= 3mA

REF

=3.5mA

REF

= 4mA

= 10V

BIAS

= 5mA

LOAD

=1kΩ

BIAS

= 6mA

BIAS

=5.5mA

BIAS

= 5mA

BIAS

=4.5mA

BIAS

= 4mA

Transfer Characteristic

Drain Voltage (V)

= 10V

REF

= 3mA

LOAD

=1kΩ

Component Selection

It is advisable to decouple the ZXGD3101 closely to VCC and ground due to the possibility of high peak gate currents with C1 in Figure 2.

The proper selection of external resistors RREF and RBIAS is important to the optimum device operation. Select a value for resistor RREF to give a

reference current, IREF, of ~3mA. The value of RBIAS must then be 0.6 times the value of RREF giving a bias current, IBIAS, of ~1.6 times IREF. This

provides a recommended typical offset voltage of ~20mV.

External gate resistors are optional. They can be inserted to control the rise times which may help with EMI issues, power supply consumption

issues or dissipation within the part.

RREF = (VCC -0.7V) / 0.003

RBIAS = (VCC -0.3V) / 0.005

Layout considerations

The Gate pins should be as close to the MOSFET Gate as possible. Also the ground return loop should be as short as possible. The decoupling

capacitor should be close to the VCC and Ground pin, and should be a X7R type.

For more detailed information refer to application note AN54..

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