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LC72709W Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LC72709W Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 16 page  No. 5876-2/16 LC72709E, 72709W Parameter Symbol Conditions Ratings Unit Maximum supply voltage VDD max –0.3 to +7.0 V Input voltage VIN1 CE, CL, DI, RST, STNBY –0.3 to +7.0 V VIN2 Pins other than VIN1 –0.3 to VDD +0.3 V Output voltage VOUT1 DO –0.3 to +7.0 V VOUT2 Pins other than VOUT1 –0.3 to VDD +0.3 V Output current IOUT BLOCK, FLOCK, BCK, FCK, DO 0 to 4.0 mA Allowable power dissipation Pd max LC72709E 250 mW LC72709W 200 mW Operating temperature Topr Ta ≤ 85°C –40 to +85 °C Storage temperature Tstg –55 to +125 °C Specifications Absolute Maximum Ratings at Ta = 25°C, VSS = 0 V Parameter Symbol Conditions Ratings Unit min typ max Supply voltage VDD 4.5 5.5 V Input high-level voltage VIH CL, CE, DI, RST, STNBY 0.7 VDD 5.5 V Input low-level voltage VIL CL, CE, DI, RST, STNBY VSS 0.3 VDD V Oscillator frequency FOSC This IC operates at frequencies within a 7.2 MHz ±250 ppm precision Input sensitivity VXI With a capacitance-coupled sine wave input 400 1500 mVrms to XIN Input amplitude VMPX MPXIN, 100% modulation composite 150 500 mVrms [Serial I/O*] Clock low-level time tCL CL 0.7 µs Clock high-level time tCH CL 0.7 µs Data setup time tSU CL, DI 0.7 µs Data hold time tHD CL, DI 0.7 µs CE wait time tEL CL, CE 0.7 µs CE setup time tES CL, CE 0.7 µs CE hold time tEH CL, CE 0.7 µs Data latch change time tLC CE 0.7 µs Data output time tDD0 DO, CL 277 555 ns Layer 4 CRC change time tCRC CRC4, CL 0.7 µs Allowable Operating Ranges at Ta = –40 to +80°C, VSS = 0 V Note *: See the serial data timing chart. Parameter Symbol Conditions Ratings Unit min typ max Output high-level voltage VOH1 IO = 2 mA, BCK, FCK, BLOCK, FLOCK, VDD – 0.4 V CRC4, INT, CLK16, DATA, IC1, IC2 Output low-level voltage VOL1 IO = 2 mA, applies to the same pins as VOH1 0.4 V VOL2 IO = 2 mA, DO 0.4 V Input high-level current IIH1 VIN = 5.5 V, CE, CL, DI, RST, STNBY 1.0 µA IIH2 VIN = VDDD, input pins other than IIH1 1.0 µA Input low-level current IIL VIN = VSSD, CL, CE, DI, RST, STNBY, –1.0 µA TP0 to TP8, TPC1 to 2, TOSEL1 to 2, TEST Input resistance RMPX MPXIN-Vssa, f = 0 to 100 kHz 50 k Ω Reference supply voltage output VREF VREF, Vdda = 5 V 2.5 V Bandpass filter center frequency FC FLOOUT 76.0 kHz –3 dB bandwidth FBW FLOUT 19.0 kHz In-band delay time difference DGD FLOUT ±5 µs Gain Gain MPXIN-FLOUT, f = 76 kHz 20 dB ATT1 FLOUT, f = 50 kHz 25 dB Stop band attenuation ATT2 FLOUT, f = 100 kHz 15 dB ATT3 FLOUT, f = 30 kHz 50 dB ATT4 FLOUT, f = 150 kHz 50 dB Electrical Characteristics at VDD = 4.5 to 5.5 V, in the allowable operating ranges Continued on next page. |
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