MK30DX64VMB7 datasheet(34/72 Pages) FREESCALE

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Table 21. NVM reliability specifications (continued)

Symbol

Description

Min.

Typ.1

Max.

Unit

Notes

Data Flash

tnvmretd10k Data retention after up to 10 K cycles

—

years

tnvmretd1k Data retention after up to 1 K cycles

100

—

years

nnvmcycd

Cycling endurance

10 K

50 K

—

cycles

FlexRAM as EEPROM

tnvmretee100 Data retention up to 100% of write endurance

—

years

tnvmretee10 Data retention up to 10% of write endurance

100

—

years

nnvmwree16

nnvmwree128

nnvmwree512

nnvmwree4k

nnvmwree8k

Write endurance

• EEPROM backup to FlexRAM ratio = 16

• EEPROM backup to FlexRAM ratio = 128

• EEPROM backup to FlexRAM ratio = 512

• EEPROM backup to FlexRAM ratio = 4096

• EEPROM backup to FlexRAM ratio = 8192

35 K

315 K

1.27 M

10 M

20 M

175 K

1.6 M

6.4 M

50 M

100 M

—

writes

1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant

25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering

Bulletin EB619.

2. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.

3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling

endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and

typical values assume all byte-writes to FlexRAM.

6.4.1.5 Write endurance to FlexRAM for EEPROM

When the FlexNVM partition code is not set to full data flash, the EEPROM data set size

can be set to any of several non-zero values.

The bytes not assigned to data flash via the FlexNVM partition code are used by the

FTFL to obtain an effective endurance increase for the EEPROM data. The built-in

EEPROM record management system raises the number of program/erase cycles that can

be attained prior to device wear-out by cycling the EEPROM data through a larger

EEPROM NVM storage space.

While different partitions of the FlexNVM are available, the intention is that a single

choice for the FlexNVM partition code and EEPROM data set size is used throughout the

entire lifetime of a given application. The EEPROM endurance equation and graph

shown below assume that only one configuration is ever used.

Writes_subsystem =

× Write_efficiency × n

EEPROM – 2 × EEESPLIT × EEESIZE

EEESPLIT × EEESIZE

nvmcycd

where

Peripheral operating requirements and behaviors

K30 Sub-Family Data Sheet, Rev. 2, 4/2012.

Freescale Semiconductor, Inc.

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